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ksp13 to92 30v 0.5a npn
2n5401 160v 600ma 100mhz (ps) to92 transistor
2n5551 180v 600ma 100mhz t092 (ns)
bc327-25 t092 50v 800ma 60mhz pnp transistor
bc327-40 t092 50v 800ma 60mhz pnp transistor
bc546b to92 30v 0.5a npn amplifier transistor
bc548b to92 30v 0.5a npn
bc556b 80v 100ma 150mhz t092 ps
bc557b to92 60v 0.8a pnp
bc846b signal transistor surface mount ideally suited for automatic insertion for switching and af a mplifier applications
bc856b general purpose transistor (surface mount) 80v 100ma sot23 3b
2sc2240 2sc3199 to92 npn audio transistortransistor for low frequency and low noise applications. de signed to low noise figurein the region of low signal source impedance, and to lower the pulse noise .recommended for the first stages of equalizer amp
2sc2229 to-92 npn high voltage switching transistorblack and white tv video output applicationshigh- voltage switching applicationsdriver stage audio amplifier applications
2sc1740 spt npn general purpose transistor
bc337-25 to92 50v 0.8a 60mhz npn transistor
bc337-40 to92 50v 0.8a 60mhz npn transistor
bc547b 50v 200mhz npn transistor t092applications:well suited for tv and home appliances and equipme ntsmall load switch transistors with high gain and low saturation voltage
2sa970 2sa1268 to-92 pnp audio transistorlow noisehigh dc current gainhigh breakdown voltagelow puls e noise
bc639 to92 100v 1a npn
bc640 to92 100v 1a pnp
2sa949 to92 pnp audio high voltage switching transistor polarity: pnp maximum collector power dissip ation (pc), w: 0.8 maximum collector-base voltage |ucb|, v: 150 maximum collector-emitter voltage |u ce|, v: 150 maximum emitter-base voltage |ueb|, v:
bd139 t0126 80v 1.5a npn
bd140 80v 1a 50mhz ps transistor to126
bd237 t0126 100v 2a 3mhz npn (ns)
bd238 t0126 100v 2a 3mhz pnp
bd238 t0126 60v 2a pnp
74ls138 3-line-to-8-line decoder 16p
bd243c t0220 100v 6a npn
bd244c t0220 100v 6a pnp (ps)
electrical characteristics tc=25°c unless otherwise specified: v(br)ceo collector-emitter breakdown voltage ic = 5ma; ib = 0 min 100 v v(br)cbo collector-base breakdown voltage ic = 5ma; ie = 0 min 2 50 v v(br)ebo emitter-base breakdown voltage ie =
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What's popularElectronic Components Semiconductors Transisto, TRNPN KSP13 BIN 632 (J), TRPNP 2N5401 TO92 BIN 612 (D), TRNPN | 2N5551 | TO92 | BIN 612 (E), TRPNP BC327-25 T092 50V 800mA 60Mhz PNP Transistor, TRPNP BC327-40 T092 50V 800mA 60Mhz PNP Transistor, TRNPN BIN 665A (E), TRNPN BC548B TO92 BIN 665A (H), TRPNP BC556B BIN 612 (F), TRPNP BC557B BIN 12(A), TRNPN BC846B Signal Transistor BIN 682 (K), TRPNP BC856B BIN 682 (J), TRNPN 2SC2240 2SC3199 TO92 NPN Audio Transistor BI, TRNPN 2SC2229 Transistor BIN 697 (D), TRNPN 2SC1740 SPT NPN General Purpose Transistor B, TRNPN BC337-25 BIN 27 (i), TRNPN BC337-40 BIN 630 (L), TRNPN BC547B TO92 BIN 665A (G), TRPNP 2SA970 2SA1268 TO-92 PNP Audio Transistor BI, TRNPN BC639 BIN 664, TRPNP BC640 BIN 664, TRPNP 2SA949 TO92 PNP Transistor BIN 697 (i), TRNPN BD139 BIN 664, TRPNP BD140 BIN 664(F), TRNPN BD237 BIN 612 (C), TRPNP BD 238 BIN 612 (B), TRPNP BD238 BIN 664, Electronic Components Semiconductors 74 Series, IC 74LS138 BIN 613 (B), TRNPN BD243C BIN 625, TRPNP BD244C BIN 612 (H), TR 3DD200 NPN BIN 643 (DE)
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